AON7421 20v p-channel mosfet v ds i d (at v gs =-10v) -50a r ds(on) (at v gs =-10v) < 4.6m w r ds(on) (at v gs =-4.5v) < 5.8m w r ds(on) (at v gs =-2.5v) < 9.0m w 100% uis tested 100% r g tested symbol v ds v maximum units -20 the AON7421 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage -20v top view 1 2 3 4 8 7 6 5 g d s ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 55 1.5 w 83 p d -200 pulsed drain current c continuous drain current g i d t c =25c 12 gate-source voltage v -50 -39 c t c =25c 6.2 33 t c =100c junction and storage temperature range -55 to 150 power dissipation a p dsm w t a =70c 4 t a =25c mj avalanche current c -24.5 t c =100c power dissipation b continuous drain current 125 -30 avalanche energy l=0.1mh c a 50 a t a =25c i dsm a t a =70c thermal characteristics units maximum junction-to-ambient a c/w r q ja 16 45 20 parameter typ max product summary general description www.freescale.net.cn 1/6
AON7421 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.5 -0.8 -1.2 v i d(on) -200 a 3.7 4.6 t j =125c 5 6.2 4.5 5.8 m w 6.3 9 m w g fs 90 s v sd -0.58 -1 v i s -50 a c iss 4550 pf c oss 823 pf c rss 563 pf r g 2.1 4.2 w q g (10v) 95 114 nc q g (4.5v) 44 53 nc q gs 6.5 nc q gd 14 nc t 7 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v m a v ds =v gs , i d =-250 m a v ds =0v, v gs =12v drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss reverse transfer capacitance on state drain current zero gate voltage drain current gate-body leakage current v gs =0v, v ds =-10v, f=1mhz switching parameters m w v gs =-10v, i d =-20a v ds =-5v, i d =-20a v gs =-2.5v, i d =-20a forward transconductance v gs =-4.5v, i d =-20a gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge i s =-1a,v gs =0v v gs =-10v, v ds =-10v, i d =-20a gate source charge gate drain charge total gate charge maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage t d(on) 7 ns t r 12 ns t d(off) 134 ns t f 45 ns t rr 30 ns q rr 75 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-20a, di/dt=500a/ m s v gs =-10v, v ds =-10v, r l =0.5 w , r gen =3 w turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =-20a, di/dt=500a/ m s turn-off delaytime turn-on rise time turn-on delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. 2/6 www.freescale.net.cn
AON7421 typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-20a v gs =-10v i d =-20a v gs =-2.5v i d =-20a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 20 40 60 80 100 120 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) -2v -3v -4.5v -10v -2.5v v gs =-1.5v v gs =-2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 3 6 9 12 15 18 0 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-20a 25 c 125 c 3/6 www.freescale.net.cn
AON7421 typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =-10v i d =-20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =1.5 c/w www.freescale.net.cn 4/6
AON7421 typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 -current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 1 10 100 1000 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =55 c/w www.freescale.net.cn 5/6
AON7421 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i www.freescale.net.cn 6/6
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